Fluctuator Model of Memory Dip in Hopping Insulators

Alexander L. Burin, Arkady K. Kurnosov

Abstract - We show that the non-equilibrium dynamic in two-dimensional electron glasses close to metal-dielectric transition is sensitive to electric field confinement inside the sample, which leads to an early thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, including a memory dip in a field dependence of conductance.

Keywords - Amorphous semiconductors, Low temperature glasses, Two level systems

Submitted to ESNF July 31, 2011; accepted August 27, 2011.  Reference CR25, Category 1, 4
Published in Journal of Low Temperature Physics 167, Numbers 3-4, 318-328, (2012)